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Experiment: Bipolar transistors (230 V, 50/60 Hz), 8000674 [UE3080200-230], Electronics

Experiment: Bipolar transistors (230 V, 50/60 Hz)

Item: 8000674 [UE3080200-230]
Objective: Messung der relevanten Kennlinien eines npn-Transistors A bipolar transistor is an electronic component composed of three alternating p-doped and n-doped semiconductor layers called the base, the collector and the emitter. Depending ... more
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Experiment: Field effect transistors (230 V, 50/60 Hz), 8000676 [UE3080300-230], Electronics

Experiment: Field effect transistors (230 V, 50/60 Hz)

Item: 8000676 [UE3080300-230]
Objective: Measure the characteristics of a field effect transistor A field effect transistor (FET) is a semiconductor component in which electric current passes through a channel and is controlled by an electric field acting perpendicular ... more
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Experiment: Bipolar transistors (115 V, 50/60 Hz), 8000673 [UE3080200-115], Electronics

Experiment: Bipolar transistors (115 V, 50/60 Hz)

Item: 8000673 [UE3080200-115]
Objective: Messung der relevanten Kennlinien eines npn-Transistors A bipolar transistor is an electronic component composed of three alternating p-doped and n-doped semiconductor layers called the base, the collector and the emitter. Depending ... more
Show Details
Experiment: Field effect transistors (115 V, 50/60 Hz), 8000675 [UE3080300-115], Electronics

Experiment: Field effect transistors (115 V, 50/60 Hz)

Item: 8000675 [UE3080300-115]
Objective: Measure the characteristics of a field effect transistor A field effect transistor (FET) is a semiconductor component in which electric current passes through a channel and is controlled by an electric field acting perpendicular ... more
Show Details