Objective: Messung der relevanten Kennlinien eines npn-Transistors
A bipolar transistor is an electronic component composed of three alternating p-doped and n-doped semiconductor layers called the base, the collector and the emitter. Depending on the sequence of the layers, the transistor may either be termed npn or pnp. The response of a bipolar transistor may be distinctively described by, for example, an input characteristic, a control characteristic and an output characteristic. In this experiment, examples of these are to be measured for an npn transistor, displayed on a graph and evaluated.
![Experiment: Bipolar transistors (115 V, 50/60 Hz), 8000673 [UE3080200-115], Electronics](/imagelibrary/UE3080200-115/UE3080200-115_01_Experiment-Bipolar-transistors-115-V-5060-Hz.jpg)
![Experiment: Bipolar transistors (115 V, 50/60 Hz), 8000673 [UE3080200-115], Electronics](/thumblibrary/UE3080200-115/UE3080200-115_01_1200_1200_Experiment-Bipolar-transistors-115-V-5060-Hz.jpg)
